CHZ9012-QFA

Note : Your request will be directed to United Monolithic Semiconductors.

The CHZ9012-QFA from United Monolithic Semiconductors is a RF Transistor with Frequency 2.7 to 3.4 GHz, Saturated Power 65 W, Duty_Cycle 10 to 30%, Gain 16 dB, Power Added Effeciency 50 to 55%. More details for CHZ9012-QFA can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHZ9012-QFA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Radar, Military, Commercial
  • Application
    General Purpose, 5G
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.7 to 3.4 GHz
  • Saturated Power
    65 W
  • Pulsed Width
    3 ms
  • Duty_Cycle
    10 to 30%
  • Gain
    16 dB
  • Power Added Effeciency
    50 to 55%
  • Supply Voltage
    50 V
  • Drain Current
    4000 mA
  • Junction Temperature (Tj)
    230 Degree C
  • Dimension
    8 x 8 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 150 Degree C

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