WP28010050 Image

WP28010050

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP28010050 from WAVEPIA is a RF Transistor with Frequency DC to 10 GHz, Saturated Power 50 W, Small Signal Gain 9 dB, VSWR 10.00:1, Supply Voltage 28 V. Tags: Die. More details for WP28010050 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP28010050
  • Manufacturer
    WAVEPIA
  • Description
    50 W, GaN HEMT Transistor from DC to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Cellular, Wireless Infrastructure
  • Application Type
    WiMAX, LTE, WCDMA, GSM, Base Station, Communication, Drone, UAV, WPT, 5G, V2X
  • CW/Pulse
    CW
  • Frequency
    DC to 10 GHz
  • Saturated Power
    50 W
  • Small Signal Gain
    9 dB
  • Transconductance
    340 mS/mm
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.2 V
  • Breakdown Voltage
    100 V
  • Drain Efficiency
    40%
  • Drain Current
    1000 to 1050 mA/mm
  • Quiescent Drain Current
    300 mA
  • IMD
    -30 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    3615 x 778 um
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain Source Current :1000 to 1050 mA/mm, Ohmic contact resistance : 0.4 Ohms

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