WP28010060UH(S) Image

WP28010060UH(S)

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP28010060UH(S) from WAVEPIA is a RF Transistor with Frequency DC to 10 GHz, Saturated Power 60 W, Small Signal Gain 11.7 dB, Power Gain (Gp) 10 dB, Power Added Effeciency 40%. Tags: Flanged. More details for WP28010060UH(S) can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    WP28010060UH(S)
  • Manufacturer
    WAVEPIA
  • Description
    60 W, GaN HEMT Transistor from DC to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Cellular, Wireless Infrastructure
  • Application Type
    WiMAX, LTE, WCDMA, GSM, WPT, V2X, 5G, Base Station
  • Application
    C Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 10 GHz
  • Saturated Power
    60 W
  • Small Signal Gain
    11.7 dB
  • Power Gain (Gp)
    10 dB
  • Power Added Effeciency
    40%
  • Transconductance
    340 mS/mm
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.2 V
  • Breakdown Voltage
    100 V
  • Drain Efficiency
    40%
  • Drain Current
    1000 to 1050 mA/mm
  • Quiescent Drain Current
    200 mA
  • IMD
    -30 dBc
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.