WP2806025UH(S) Image


RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP2806025UH(S) from Wave Pia is an Unmatched GaN HEMT that operates from DC to 5 GHz. It delivers a saturated output power of 25 W (45.4 dBm) with a gain of 17.4 dB and has a pulsed drain efficiency of 78.3%. The transistor has a pulse width of 100 µs and a duty cycle of 10%. It requires a supply of 28 V and consumes up to 30 mA of current. This transistor is available in a surface-mount package and is suitable for broadband amplifiers, cellular infrastructure, test instrumentation, WiMAX, LTE, WCDMA, GSM and radar applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    25 W Unmatched GaN Transistor from DC to 5 GHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Radar, Test & Measurement, Wi-Fi / Bluetooth
  • Application
    WCDMA, LTE, GSM, WiMax
  • CW/Pulse
  • Frequency
    DC to 5 GHz
  • Power
    43.98 to 45.4 dBm
  • Power(W)
    25 to 34.67 W (Psat)
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.5 V (Gate)
  • Breakdown Voltage - Drain-Source
    160 V
  • Current
    100 mA
  • Drain Efficiency
    78.3 %
  • Drain Current
    1 A/mm (Saturated)
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount, 2-Hole Flange
  • Grade
  • Storage Temperature
    -65 to 150 Degree C

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