WP2816P0008MH Image

WP2816P0008MH

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP2816P0008MH from WAVE PIA is a GaN HEMT transistor that operates from DC to 18 GHz. It provides a saturated output power of 8 W and a small signal gain of 9.7 dB, and an efficiency of 25.8% @ 16 GHz. This transistor requires 28 to 32 V of power supply. It is available in a surface-mount package and is ideal for broadband amplifiers, SATCOM, test instrumentation, and radar applications.

Product Specifications

View similar products

Product Details

  • Part Number
    WP2816P0008MH
  • Manufacturer
    WAVEPIA
  • Description
    8 W GaN HEMT Transistor from DC to 18 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, SATCOM, Test & Measurement
  • Frequency
    DC to 18 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • Peak Output Power
    4 W
  • Saturated Power
    8 W
  • Small Signal Gain
    9.7 dB
  • Efficiency
    25.8 %
  • Supply Voltage
    28 to 32 V
  • Threshold Voltage
    -3 to 1 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Current
    1 A
  • Package Type
    Ceramic, 2-Hole Flange
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.