WP282P10020MH

RF Transistor by WAVEPIA (84 more products)

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The WP282P10020MH from WAVEPIA is a GaN HEMT that operates from 2 to 2.2 GHz. It delivers a saturated output power of 20 W with a gain of 13.7 dB and has a drain efficiency of 50%. This 50-ohm transistor requires a DC supply of 28 V and consumes less than 1 A of current. It is available in a surface-mount package that measures 24.0 x 17.6 mm and is suitable for use in broadband amplifiers, cellular infrastructure, test instrumentation, and radar applications.

Product Specifications

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Product Details

  • Part Number
    WP282P10020MH
  • Manufacturer
    WAVEPIA
  • Description
    20 W GaN HEMT from 2 to 2.2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Industry
    Cellular, Radar, Test & Measurement
  • Application
    Broadband Amplifiers, Test Instrumentation
  • CW/Pulse
    CW
  • Frequency
    2 to 2.2 GHz
  • Power
    43.01 to 45 dBm (Psat)
  • Power(W)
    20 to 31.62 W (Psat)
  • Gain
    13.7 to 17 dB
  • Small Signal Gain
    17 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    160 V
  • Current
    150 mA
  • Drain Efficiency
    47 to 50.6 %
  • Drain Current
    1000 mA/mm
  • Junction Temperature (Tj)
    225 Degree C
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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