WP284P5008UH(S) Image

WP284P5008UH(S)

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP284P5008UH(S) from WAVEPIA is a RF Transistor with Frequency DC to 6 GHz, Power 37.78 dBm, Power(W) 6 W, Saturated Power 11.6 W, Duty_Cycle 10%. Tags: Flanged. More details for WP284P5008UH(S) can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP284P5008UH(S)
  • Manufacturer
    WAVEPIA
  • Description
    6 W, GaN HEMT Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Test & Measurement, Radar
  • Application Type
    WiMAX, LTE, WCDMA, GSM
  • Application
    X Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    37.78 dBm
  • Power(W)
    6 W
  • Saturated Power
    11.6 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Small Signal Gain
    14 dB
  • Power Gain (Gp)
    11 dB
  • Power Added Effeciency
    61%
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.1 V
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    58%
  • Drain Current
    1000 mA/mm
  • Quiescent Drain Current
    70 mA
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : -2.23 V

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