WP285P5020UH(S)

RF Transistor by WAVEPIA (84 more products)

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WP285P5020UH(S) Image

The WP285P5020UH(S) from WAVEPIA is a RF Transistor with Frequency 5 to 6 GHz, Saturated Power 25.7 W, Duty_Cycle 10%, Gain 8.8 dB, Small Signal Gain 11.5 dB. Tags: Flanged. More details for WP285P5020UH(S) can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP285P5020UH(S)
  • Manufacturer
    WAVEPIA
  • Description
    25.7 W, GaN HEMT Transistor from 5 to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Wireless Infrastructure, Test & Measurement, Radar
  • Application Type
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW, Pulse
  • Frequency
    5 to 6 GHz
  • Saturated Power
    25.7 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Gain
    8.8 dB
  • Small Signal Gain
    11.5 dB
  • Power Added Effeciency
    39.30%
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3 V
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    39.30%
  • Drain Current
    1000 mA/mm
  • Quiescent Drain Current
    160 mA
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : -2.3 V

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