WP286P25020MH(S)

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP286P25020MH(S) from WAVEPIA is a RF Transistor with Frequency 5.8 to 6.7 GHz, Saturated Power 22.18 W, Small Signal Gain 11.6 dB, Power Gain (Gp) 8.46 dB, Power Added Effeciency 32%. Tags: Flanged. More details for WP286P25020MH(S) can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP286P25020MH(S)
    • Manufacturer :
      WAVEPIA
    • Description :
      22.18 W, GaN HEMT Transistor from 5.8 to 6.7 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular, Test & Measurement, Radar
    • CW/Pulse :
      CW
    • Frequency :
      5.8 to 6.7 GHz
    • Saturated Power :
      22.18 W
    • Small Signal Gain :
      11.6 dB
    • Power Gain (Gp) :
      8.46 dB
    • Power Added Effeciency :
      32%
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -2.5 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      40.92%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      190 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : '-2.33 V

    Technical Documents

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