WP287P2015MS(S)

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP287P2015MS(S) from WAVEPIA is a RF Transistor with Frequency 6.95 to 7.45 GHz, Saturated Power 18.8 W, Duty_Cycle 10%, Small Signal Gain 13.17 dB, Power Gain (Gp) 9 dB. Tags: Flanged. More details for WP287P2015MS(S) can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP287P2015MS(S)
    • Manufacturer :
      WAVEPIA
    • Description :
      18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM, Test & Measurement, Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      6.95 to 7.45 GHz
    • Saturated Power :
      18.8 W
    • Pulsed Width :
      0.1 mS
    • Duty_Cycle :
      10%
    • Small Signal Gain :
      13.17 dB
    • Power Gain (Gp) :
      9 dB
    • Power Added Effeciency :
      57.80%
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      57.80%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      150 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : 2.3 V

    Technical Documents

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