WP288P0015MH

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP288P0015MH from WAVEPIA is a RF Transistor with Frequency 7.8 to 8.2 GHz, Saturated Power 15 to 18.6 W, Small Signal Gain 10 dB, Power Gain (Gp) 7.8 dB, Power Added Effeciency 45%. Tags: Flanged. More details for WP288P0015MH can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP288P0015MH
    • Manufacturer :
      WAVEPIA
    • Description :
      15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM, Radar, Broadcast
    • Application Type :
      Radio
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      7.8 to 8.2 GHz
    • Saturated Power :
      15 to 18.6 W
    • Small Signal Gain :
      10 dB
    • Power Gain (Gp) :
      7.8 dB
    • Power Added Effeciency :
      45%
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      46.70%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      150 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : '-2.32 V

    Technical Documents

Click to view more product details on manufacturer's website  »

Application Note

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