WP481P06100MH

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP481P06100MH from WAVEPIA is a RF Transistor with Frequency 1.03 to 1.09 GHz, Saturated Power 112.2 W, Duty_Cycle 10%, Small Signal Gain 21 dB, Power Gain (Gp) 18.5 dB. Tags: Flanged. More details for WP481P06100MH can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP481P06100MH
    • Manufacturer :
      WAVEPIA
    • Description :
      112.2 W, GaN HEMT Transistor from 1.03 to 1.09 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular, Test & Measurement, Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Saturated Power :
      112.2 W
    • Pulsed Width :
      0.1 mS
    • Duty_Cycle :
      10%
    • Small Signal Gain :
      21 dB
    • Power Gain (Gp) :
      18.5 dB
    • Power Added Effeciency :
      64%
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3.2 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      64%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      150 mA
    • Package Type :
      Flanged
    • Package :
      680BU
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : '-2.95 V,Pulse Drain Efficiency : 64%

    Technical Documents

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