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WP481P06200MH

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP481P06200MH from WAVEPIA is a GaN High Electron Mobility Transistor (HEMT) that operates from 1.03 to 1.09 GHz. It delivers a saturated output power of 54.53 dBm (~283 W) with a gain of 17.53 dB and has a drain efficiency of 62.76%. The transistor requires a DC supply of 48 V. It is available in a surface-mount or screw-hole package and is suitable for use in broadband amplifiers, cellular infrastructure, test instrumentation, and radar applications.

Product Specifications

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Product Details

  • Part Number
    WP481P06200MH
  • Manufacturer
    WAVEPIA
  • Description
    280 W GaN HEMT from 1.03 to 1.09 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Industry
    Cellular, Radar, Test & Measurement, SATCOM
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    54.53 dBm
  • Saturated Power
    283 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10 %
  • Gain
    17.53 dB
  • Supply Voltage
    48 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    62.76 %
  • Drain Current
    1 A
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • Dimension
    24 x 17.6 x 3.75 mm
  • Storage Temperature
    -65 to 150 Degree C

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