WP482P4130US_A400W

RF Transistor by WAVEPIA (79 more products)

Note : Your request will be directed to WAVEPIA.

The WP482P4130US_A400W from WAVEPIA is a RF Transistor with Frequency DC to 3.5 GHz, Saturated Power 280 to 410 W, Duty_Cycle 10%, Small Signal Gain 14.6 dB, Power Added Effeciency 65%. Tags: Flanged. More details for WP482P4130US_A400W can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP482P4130US_A400W
    • Manufacturer :
      WAVEPIA
    • Description :
      280 to 410 W, GaN HEMT Transistor from DC to 3.5 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular, Wireless Infrastructure, Test & Measurement, Radar
    • Application Type :
      WiMAX, LTE, WCDMA, GSM
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 3.5 GHz
    • Saturated Power :
      280 to 410 W
    • Pulsed Width :
      1 mS
    • Duty_Cycle :
      10%
    • Small Signal Gain :
      14.6 dB
    • Power Added Effeciency :
      65%
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3.4 V
    • Drain Efficiency :
      51 to 65 %
    • Quiescent Drain Current :
      150 mA
    • Package Type :
      Flanged
    • Note :
      Gate Quiescent Voltage : -3 to 2.95 V

    Technical Documents

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