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WP483P3100UH

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP483P3100UH from WAVEPIA is a RF Transistor with Frequency DC to 4 GHz, Saturated Power 120.23 W, Duty_Cycle 10%, Gain 10.1 dB, Small Signal Gain 12 dB. Tags: Flanged. More details for WP483P3100UH can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP483P3100UH
  • Manufacturer
    WAVEPIA
  • Description
    120.23 W, GaN HEMT Transistor from DC to 4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Test & Measurement, Radar
  • Application Type
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 4 GHz
  • Saturated Power
    120.23 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Gain
    10.1 dB
  • Small Signal Gain
    12 dB
  • Power Gain (Gp)
    50.8 dB
  • Power Added Effeciency
    58.80%
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.3 V
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    58.80%
  • Drain Current
    1000 mA/mm
  • Quiescent Drain Current
    150 mA
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : -2.92 V

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