WP483P5400US Ver2 Image

WP483P5400US Ver2

RF Transistor by WAVEPIA

Note : Your request will be directed to WAVEPIA.

The WP483P5400US Ver2 from WAVEPIA is a RF Transistor with Frequency DC to 3.5 GHz, Power 55.44 dBm, Power(W) 350 W, Saturated Power 387 W, Duty_Cycle 10%. Tags: Flanged. More details for WP483P5400US Ver2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP483P5400US Ver2
  • Manufacturer
    WAVEPIA
  • Description
    350 W, GaN HEMT Transistor from DC to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Test & Measurement, Radar
  • Application Type
    WiMAX, LTE, WCDMA, GSM
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 3.5 GHz
  • Power
    55.44 dBm
  • Power(W)
    350 W
  • Saturated Power
    387 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Small Signal Gain
    10.2 dB
  • Power Gain (Gp)
    9.6 dB
  • Power Added Effeciency
    48.90%
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.1 V
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 v
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    48.90%
  • Drain Current
    1000 mA/mm
  • Quiescent Drain Current
    500 mA
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : -2.83 V

Technical Documents

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