WP485P03025(60)MH

RF Transistor by WAVEPIA (79 more products)

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The WP485P03025(60)MH from WAVEPIA is a RF Transistor with Frequency DC to 6 GHz, Power 43.98 dBm, Power(W) 25 W, Saturated Power 25 to 30 W, Small Signal Gain 14.5 dB. Tags: Flanged. More details for WP485P03025(60)MH can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP485P03025(60)MH
    • Manufacturer :
      WAVEPIA
    • Description :
      25 W, GaN HEMT Transistor from DC to 6 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Test & Measurement, Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 6 GHz
    • Power :
      43.98 dBm
    • Power(W) :
      25 W
    • Saturated Power :
      25 to 30 W
    • Small Signal Gain :
      14.5 dB
    • Power Gain (Gp) :
      11.5 dB
    • Power Added Effeciency :
      26%
    • VSWR :
      10.00:1
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3.1 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      26%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      300 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : '-2.79 V,Pulse Drain Efficiency : 26%

    Technical Documents

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