WP485P55100MH

RF Transistor by WAVEPIA (82 more products)

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The WP485P55100MH from WAVEPIA is a Matched GaN HEMT that operates from 5.3 to 5.8 GHz. It provides a saturated output power of 100 W with a small signal gain of 9.6 dB and has an efficiency of 41.3% @ 5.5 GHz. This transistor requires a 48 V DC supply. It is available in a 680MH surface-mount package that measures 24.0 x 21.2 x 1.3 mm and is ideal for point to point / multipoint radios, test equipment & industrial controls, SATCOM, military end-use, and C-band radar applications.

Product Specifications

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Product Details

  • Part Number
    WP485P55100MH
  • Manufacturer
    WAVEPIA
  • Description
    100 W GaN HEMT Transistor from 5.3 to 5.8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Broadcast, Military, Radar, SATCOM, Test & Measurement
  • CW/Pulse
    Pulse
  • Frequency
    5.3 to 5.8 GHz
  • Power
    50.3 dBm (Psat)
  • Power(W)
    107.15 W (Psat)
  • Pulsed Width
    200 us
  • Duty_Cycle
    10 %
  • Small Signal Gain
    9 to 9.6 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.5 V
  • Breakdown Voltage - Drain-Source
    160 V
  • Current
    200 mA
  • Drain Efficiency
    41.3 %
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    4-Hole Flange
  • Storage Temperature
    -65 to 150 Degree C

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