Note : Your request will be directed to WAVICE.
The WG40120SF/P from WAVICE is a RF Transistor with Frequency DC to 4 GHz, Saturated Power 120 W, Power Gain (Gp) 18.5 dB, Power Added Effeciency 68%, Supply Voltage 28 V. Tags: Flange. More details for WG40120SF/P can be seen below.
1600 W LDMOS Power Transistor from 1 to 450 MHz
3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
550 W LDMOS Power Transistor from 2110 to 2180 MHz
615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
2.9 W GaN HEMT Power Amplifier from 0.5 to 3 GHz
6 W RF Power GaN HEMT in a Plastic Package
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