WG40120SF/P

RF Transistor by WAVICE (33 more products)

Note : Your request will be directed to WAVICE.

WG40120SF/P Image

The WG40120SF/P from WAVICE is a RF Transistor with Frequency DC to 4 GHz, Saturated Power 120 W, Power Gain (Gp) 18.5 dB, Power Added Effeciency 68%, Supply Voltage 28 V. Tags: Flange. More details for WG40120SF/P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    WG40120SF/P
  • Manufacturer
    WAVICE
  • Description
    120 W, GaN on SiC Power Transistor from DC to 4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Broadcast
  • CW/Pulse
    CW
  • Frequency
    DC to 4 GHz
  • Saturated Power
    120 W
  • Power Gain (Gp)
    18.5 dB
  • Power Added Effeciency
    68%
  • Supply Voltage
    28 V
  • Package Type
    Flange
  • Grade
    Commercial, Military