The HMC1118LP3DE is an absorptive SPDT switch that operates from 9 KHz to 13 GHz. The switch has been developed on a silicon process technology, which offers critical advantages over legacy GaAs RF switches. These advantages include a settling time that is considerably faster than GaAs, robust ESD (electro-static discharge) protection (2000 V vs. 250 V compared to GaAs), and the ability to extend the switch's low frequency-end one thousand times lower than GaAs while maintaining high linearity. The HMC1118LP3DE has a high isolation of 48 dB and low insertion-loss of 0.6 dB at 8 GHz. The switch can handle up to 4 W of power and 0.5 W in hot-switching operating modes.