HMC1118LP3DE Image


RF Switch by Analog Devices (84 more products)

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The HMC1118LP3DE is an absorptive SPDT switch that operates from 9 KHz to 13 GHz. The switch has been developed on a silicon process technology, which offers critical advantages over legacy GaAs RF switches. These advantages include a settling time that is considerably faster than GaAs, robust ESD (electro-static discharge) protection (2000 V vs. 250 V compared to GaAs), and the ability to extend the switch's low frequency-end one thousand times lower than GaAs while maintaining high linearity. The HMC1118LP3DE has a high isolation of 48 dB and low insertion-loss of 0.6 dB at 8 GHz. The switch can handle up to 4 W of power and 0.5 W in hot-switching operating modes.

Product Specifications

  • Part Number
  • Manufacturer
    Analog Devices
  • Description
    9 kHz to 13 GHz Silicon Based SPDT Switch
  • Type
    RFIC Switch, Solid State Switch
  • Configuration
  • Termination
  • Application Industry
    Test & Measurement, Space
  • Frequency
    9 kHz to 13 GHz
  • Insertion Loss
    0.68 dB
  • Isolation
    50 dB
  • P1dB
    37 dBm(input)
  • Power
    27 to 35.5 dBm
  • Impedance
    50 Ohms
  • Package Type
    Surface Mount
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