BGS15MU14 Image


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The BGS15MU14 from Infineon is a high isolation SP5T CMOS Switch that operates from 0.4 to 6 GHz. It is a perfect fit for concurrent transmit chains in LTE Uplink-Carrier Aggregation and MIMO RF design scenarios on input port feedback receive (FBRx). The switch can handle up to 23 dBm of peak input power, has an insertion loss of less than 1.5 dB, and provides port-to-port isolation of up to 63 dB (@1 GHz). It has a switching speed of up to 180 ns and is controlled via a MIPI RFFE 2.1 compliant controller that allows power-supply voltages from 1.65 to 1.95 V.

The switch is fabricated using Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including higher ESD robustness. It is available in a low-profile leadless plastic package that measures 1.5 x 1.9 mm and is suitable for LTE and 5G feedback receive applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    High Isolation SP5T Switch from 0.4 to 6 GHz

General Parameters

  • Type
    Solid State
  • Configuration
  • Application
    4G, 5G
  • Application Industry
    Wireless Infrastructure
  • Frequency
    400 MHz to 6 GHz
  • Insertion Loss
    0.46 to 1.57 dB
  • Isolation
    41 to 70 dB
  • Power
    20 dBm
  • Power
    0.1 W
  • Peak Power
    23 dBm
  • Supply Voltage
    1.65 to 1.95 V
  • Supply Current
    60 to 100 uA
  • Switching Speed
    180 ns
  • Control
    MIPI RFFE 2.1
  • Impedance
    50 Ohm
  • VSWR
  • Package Type
    Surface Mount
  • Package
    Ultra low profile leadless plastic package
  • Dimension
    1.5 x 1.9 mm
  • Technology
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Grade
  • RoHS

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