RF Capacitors - High Q Capacitors

119 RF Capacitors from 7 Manufacturers meet your specification.
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  • Type: High Q Capacitors
Description:RF/Microwave Porcelain Multilayer Capacitors
Type:
High Q Capacitors
Capacitance:
0.1 to 100 pF
Termination:
Nickel barrier
Dielectric Strength:
250% of rated WVDC for 5 secs
Dielectric Material:
Porcelain, Ceramic
Q Factor:
10000
Voltage (WVDC):
150, 200, 250 V
more info
Description:0.5 to 2700 pF High-Q Low ESR Ceramic Capacitor
Type:
High Q Capacitors, Ceramic Capacitors
Capacitance:
0.5 to 2700 pF
Termination:
Axial Ribbon, Axial Wire, Microstrip, Radial Wire
Dielectric Strength:
120% to 250% of Rated WVDC
Dielectric Material:
NPO, Ceramic, Porcelain
Q Factor:
10000
Form Factor:
Surface Mount
Voltage (WVDC):
2500 to 3600 V
more info
Description:RF/Microwave Porcelain Multilayer Capacitors
Type:
High Q Capacitors
Capacitance:
0.1 to 1000 pF
Termination:
Nickel Barrier, Microstrip, Axial Ribbon, Radial W...
Dielectric Strength:
250% of rated WVDC for 5 secs
Dielectric Material:
Porcelain, Ceramic
Q Factor:
10000
Voltage (WVDC):
50, 100, 200, 300, 500, 1000, 1500, 2500 V
more info
Description:Chip Capacitors with Square Bonding Pads
Type:
High Q Capacitors, Chip Capacitors
Capacitance:
50 pF
Dielectric Strength:
200 V
Dielectric Material:
Metal-Nitride-Silicon
Form Factor:
Chip, Die
more info
Description:RF/Microwave COG (NPO) Multilayer Capacitors
Type:
High Q Capacitors
Capacitance:
0.1pF to 100pF
Termination:
Nickel barrier
Dielectric Strength:
250% of rated WVDC for 5 secs
Dielectric Material:
NPO, Ceramic
Q Factor:
2000
Form Factor:
Surface Mount
Voltage (WVDC):
100, 250 V
more info
Description:300 to 3000 pF High Q Chip Capacitors
Type:
High Q Capacitors, Chip Capacitors
Capacitance:
300 to 3000 pF
Dielectric Material:
Silicon Nitride, Silicon Dioxide
more info
Description:ATC // AVXMOS Single Layer Capacitors
Type:
High Q Capacitors
Capacitance:
100 to 400 pF
Dielectric Strength:
Peak Voltage: 1.5 x Rated
Dielectric Material:
Silicon dioxide
Form Factor:
Surface Mount
Voltage (WVDC):
25 to 100 V
more info
Description:Metal Oxide Semiconductor Capacitors from 1 to 1000 pF
Type:
High Q Capacitors
Capacitance:
1 to 1000 pF
Dielectric Material:
Silicon Dioxide
Form Factor:
Surface Mount
Voltage (WVDC):
25 to 200 V
more info
Description:RF/Microwave COG (NPO) Multilayer Capacitors
Type:
High Q Capacitors
Capacitance:
0.1pF to 1000pF
Termination:
Nickel barrier
Dielectric Strength:
250% of rated WVDC for 5 secs
Dielectric Material:
NPO, Ceramic
Q Factor:
2000 to 10000
Voltage (WVDC):
50, 150, 200, 250 V
more info
Description:0201 (R05L) L-Series, NPO, Low ESR Capacitor Multi-Layer High-Q Capacitors
Type:
High Q Capacitors, Ceramic Capacitors, MLCCs
Capacitance:
0.2 to 100 pF
Dielectric Strength:
500 to 1500 V
Dielectric Material:
Ceramic
Q Factor:
1000 to 10000
Voltage (WVDC):
25/50V
more info

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