RF Amplifiers

31 RF Amplifiers from 4 Manufacturers meet your specification.
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  • Manufacturers : Nextec - RF, Tricon MMIC, Mitsubishi Electric US, Inc., RFTR Electronics  
  • Output Power : 1 to 9999 W  
Description: Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Industry Application:
Aerospace & Defense, SATCOM
Configuration:
IC/MMIC/SMT
Type:
Power Amplifier
Frequency:
27.5 to 31 GHz
Gain:
15 dB
Pulsed/CW:
CW
Saturated Power:
8 W
Package Type:
Surface Mount
more info
Description: 1 kW Radar Pallet Amplifier from 2.7 to 2.9 GHz
Industry Application:
Aerospace & Defense, Radar
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA, Pallet Amplifier
Frequency:
2.7 to 2.9 GHz
Gain:
10.5 dB
Pulsed/CW:
Pulsed
Package Type:
Through Hole
more info
Description: 800 W, 4 Channel Solid State Amplifiers from 1.030 to 1.090 GHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
1.030 to 1.090 GHz
Gain:
60 dB
Pulsed/CW:
CW
Package Type:
Through Hole
more info
Description: 400 W, Rack Mountable High Power Instrumental Amplifiers from 1.5 to 30 MHz
Industry Application:
Electronic Warfare, Aerospace & Defense
Configuration:
System
Type:
Power Amplifier, Differential Amplifier
Frequency:
1.5 to 30 MHz
Gain:
50 dB
Pulsed/CW:
CW
Modulation:
AM, SSB
Package Type:
Rack Mount
more info
Description: 13.5 to 14.5 dB, Distributed Power Amplifier Die from DC to 22 GHz
Industry Application:
Test & Measurement, Broadcast
Configuration:
Die
Type:
Driver Amplifier, Power Amplifier
Sub-Category:
Distributed Amplifier
Frequency:
DC to 22 GHz
Gain:
13.5 to 14.5 dB
Noise Figure:
4.5 dB
P1dB:
28 dBm
Saturated Power:
1.12 to 1.26 W
IP3:
38 to 40 dBm
Package Type:
Surface Mount
more info
Description: 1000 W, GaN on SiC Transistor Technology Amplifiers from 2.8 to 3.3 GHz
Industry Application:
Aerospace & Defense, Radar
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA, Pallet Amplifier
Frequency:
2.8 to 3.3 GHz
Gain:
10 dB
Pulsed/CW:
CW
Package Type:
Through Hole
more info
Description: 13.5 dB, Distributed Power Amplifier Die from 0.2 to 22 GHz
Industry Application:
Test & Measurement, Broadcast
Configuration:
Die
Type:
Driver Amplifier, Power Amplifier
Sub-Category:
Distributed Amplifier
Frequency:
0.2 to 22 GHz
Gain:
13.5 dB
Noise Figure:
4.5 dB
P1dB:
26 to 27 dBm
Saturated Power:
0.79 to 1 W
IP3:
36 to 38 dBm
Package Type:
Surface Mount
more info
Description: 650 W, GaN on SiC Transistor Technology Amplifiers from 2.8 to 3.3 GHz
Industry Application:
Aerospace & Defense, Radar
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA, Pallet Amplifier
Frequency:
2.8 to 3.3 GHz
Gain:
10.5 dB
Pulsed/CW:
CW
Package Type:
Through Hole
more info
Description: 12.5 to 13.5 dB, Distributed Power Amplifier Die from 0.1 to 22 GHz
Industry Application:
Test & Measurement, Broadcast
Configuration:
Die
Type:
Driver Amplifier, Power Amplifier
Sub-Category:
Distributed Amplifier
Frequency:
0.1 to 22 GHz
Gain:
12.5 to 13.5 dB
Noise Figure:
5.5 to 6
P1dB:
31 dBm
Saturated Power:
2 to 2.24 W
IP3:
39 to 41 dBm
Package Type:
Surface Mount
more info
Description: 375 W, GaN on SiC Transistor Technology Amplifiers from 2.8 to 3.3 GHz
Industry Application:
Aerospace & Defense, Radar
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA, Pallet Amplifier
Frequency:
2.8 to 3.3 GHz
Gain:
10.5 dB
Pulsed/CW:
CW
Package Type:
Through Hole
more info
Description: 25 W, GaN on SiC Transistor Technology Amplifiers from 20 to 520 MHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
20 to 520 MHz
Gain:
44 dB
Pulsed/CW:
CW
more info
Description: 160 W, GaN on SiC Transistor Technology Amplifiers from 500 MHz to 3 GHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
500 MHz to 3 GHz
Gain:
52 dB
Pulsed/CW:
CW
more info
Description: 50 W, GaN on SiC Transistor Technology Amplifiers from 700 MHz to 2.7 GHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
700 MHz to 2.7 GHz
Gain:
47 dB
Pulsed/CW:
CW
more info
Description: 9.4 to 10.6 GHz, 30 dB Gain Power Amplifier
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
Hybrid Amplifier
Frequency:
9.4 to 10.6 GHz
Gain:
30 dB
Noise Figure:
6 dB
Pulsed/CW:
CW
P1dB:
30 dBm
more info
Description: 50 W, GaN on SiC Transistor Technology Amplifiers from 400 MHz to 3 GHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
400 MHz to 3 GHz
Gain:
47 dB
Pulsed/CW:
CW
more info
Description: 2500 to 2700 MHz, GaAs Power Amplifier for Wireless Infrastructure Applications
Industry Application:
Wireless Infrastructure
Configuration:
IC/MMIC/SMT
Type:
Power Amplifier
Frequency:
2.5 to 2.7 GHz
Gain:
42 dB
Pulsed/CW:
CW
Saturated Power:
1 W
Package Type:
Surface Mount
more info
Description: 25 W, MOS Transistor Technology Amplifiers from 1.5 to 30 MHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
1.5 to 30 MHz
Gain:
44 dB
Pulsed/CW:
CW
more info
Description: 35 to 45 W, GaN on SiC Transistor Technology Amplifiers from 2 to 6 GHz
Industry Application:
Aerospace & Defense
Configuration:
Module with Connector
Type:
Power Amplifier
Sub-Category:
SSPA
Frequency:
2 to 6 GHz
Gain:
46 dB
Pulsed/CW:
CW
more info

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