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RF PIN Diodes - Infineon Technologies

27 RF PIN Diodes from Infineon Technologies meet your specification.

RF PIN Diodes from Infineon Technologies are listed on everything RF. We have compiled a list of RF PIN Diodes from the Infineon Technologies website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Infineon Technologies and their distributors in your region.

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BAR64-02V Image
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Infineon Technologies - BAR64-02V

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 MHz to 6 GHz
No. of Diodes:
1
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.13 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR65-02V Image
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Infineon Technologies - BAR65-02V

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.93 to 1 V
Forward Current:
100 mA
Reverse Voltage:
30 V
Reverse Current:
0.02 uA
Capacitance:
0.4 to 0.9 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR64-04W Image
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Infineon Technologies - BAR64-04W

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
In Series
Frequency:
1 MHz to 6 GHz
No. of Diodes:
2
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.13 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR63-06W Image
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Infineon Technologies - BAR63-06W

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Common Anode
Frequency:
Up to 3 GHz
No. of Diodes:
2
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR63-03W Image
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Infineon Technologies - BAR63-03W

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR64-06W Image
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Infineon Technologies - BAR64-06W

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Common Anode
Frequency:
1 MHz to 6 GHz
No. of Diodes:
2
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.17 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR64-04 Image
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Infineon Technologies - BAR64-04

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
In Series
Frequency:
1 MHz to 6 GHz
No. of Diodes:
2
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.13 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR90-02ELS Image
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Infineon Technologies - BAR90-02ELS

RF PIN Diode from Infineon Technologies
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Description:Silicon Deep Trench PIN Diodes with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 GHz
No. of Diodes:
1
Forward Voltage:
0.75 to 1 V
Forward Current:
100 mA
Reverse Voltage:
80 V
Reverse Current:
0.05 uA
Capacitance:
0.18 to 0.35 pF
Power Dissipation:
150 mW
Package Type:
Flatpack
more info
BAR64-03W Image
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Infineon Technologies - BAR64-03W

RF PIN Diode from Infineon Technologies
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Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 MHz to 6 GHz
No. of Diodes:
1
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.17 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAT18-04 Image
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Infineon Technologies - BAT18-04

RF PIN Diode from Infineon Technologies
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Description:Silicon RF Switching Diode with 100 mA of forward current
Configuration:
In Series
No. of Diodes:
2
Forward Voltage:
0.92 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
35 V
Reverse Current:
0.02 to 0.2 uA
Capacitance:
0.75 to 1 pF
Package Type:
Flatpack
more info
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