RF PIN Diodes

12 RF PIN Diodes from Infineon Technologies meet your specification.
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  • Manufacturers: Infineon Technologies
  • Configuration: Single Diode
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 MHz to 6 GHz
No. of Diodes:
1
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.13 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.93 to 1 V
Forward Current:
100 mA
Reverse Voltage:
30 V
Reverse Current:
0.02 uA
Capacitance:
0.4 to 0.9 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon Deep Trench PIN Diodes with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 GHz
No. of Diodes:
1
Forward Voltage:
0.75 to 1 V
Forward Current:
100 mA
Reverse Voltage:
80 V
Reverse Current:
0.05 uA
Capacitance:
0.18 to 0.35 pF
Power Dissipation:
150 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 MHz to 6 GHz
No. of Diodes:
1
Forward Voltage:
1.1 V
Forward Current:
100 mA
Reverse Voltage:
150 V
Capacitance:
0.17 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.93 to 1 V
Forward Current:
100 mA
Reverse Voltage:
30 V
Reverse Current:
0.02 uA
Capacitance:
0.4 to 0.9 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
BAR90-02EL Image
Description:Silicon Deep Trench PIN Diodes with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 GHz
No. of Diodes:
1
Forward Voltage:
0.75 to 1 V
Forward Current:
100 mA
Reverse Voltage:
80 V
Reverse Current:
0.05 uA
Capacitance:
0.18 to 0.35 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Shunt, Single Diode
No. of Diodes:
1
Forward Voltage:
0.93 to 1 V
Forward Current:
100 mA
Reverse Voltage:
30 V
Reverse Current:
0.02 uA
Capacitance:
0.57 to 1 pF
Power Dissipation:
100 mW
Package Type:
Flatpack
more info

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  • Manufacturers: Infineon Technologies
  • Configuration: Single Diode

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No. of Diodes