RF PIN Diodes - Single Diode - Page 8

89 RF PIN Diodes from 6 Manufacturers meet your specification.
Selected Filters Reset All
  • Configuration: Single Diode
BAP51-02 Image
Description:General purpose PIN diode with 50 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.95 to 1.1 V
Forward Current:
50 mA
Reverse Voltage:
60 V
Reverse Current:
0.1 uA
Capacitance:
0.2 to 0.55 pF
Power Dissipation:
715 mW
Package Type:
Surface Mount
more info
Description:Silicon PIN Diode Bondable Chips Silicon PIN Diode Bondable Chips Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 30 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.1 to 0.20 pF
Package Type:
Chip
more info
BAP65-03 Image
Description:Silicon PIN diode with 100 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.9 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
30 V
Reverse Current:
0.02 uA
Capacitance:
0.375 to 0.9 pF
Power Dissipation:
500 mW
Package Type:
Surface Mount
more info
Description:Surface Mount PIN Diode with 200 mA of forward current
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.65 V
Forward Current:
200 mA
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.48 to 0.60 pF
Power Dissipation:
1000 mW
Package Type:
Surface Mount
more info
BAP55LX Image
Description:Silicon PIN diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 to 0.1 uA
Capacitance:
0.18 to 0.28 pF
Power Dissipation:
135 mW
Package Type:
Surface Mount
more info
Description:Hermetic Ceramic Packaged Silicon PIN Diode Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 20 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
50 V
Reverse Current:
10 uA
Capacitance:
0.35 to 0.4 pF
Package Type:
Ceramic
more info
BAP64LX Image
Description:Silicon PIN diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 3 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
60 V
Reverse Current:
0.1 uA
Capacitance:
0.17 to 0.48 pF
Power Dissipation:
150 mW
Package Type:
Surface Mount
more info
Description:Large Signal Switching, Plastic Packaged PIN Diodes
Configuration:
In Series, Single Diode
Frequency:
10 MHz to 10 GHz
No. of Diodes:
1, 2
Forward Voltage:
0.8 V
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.35 pF
Power Dissipation:
250 mW
Package Type:
Surface Mount
more info
Description:Hermetic Ceramic Packaged Silicon PIN Diode Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 20 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.35 to 0.4 pF
Package Type:
Ceramic
more info
BAP64-02 Image
Description:Silicon PIN diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
Up to 6 GHz
No. of Diodes:
1
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
175 V
Reverse Current:
1 to 10 uA
Capacitance:
0.23 to 0.48 pF
Power Dissipation:
715 mW
Package Type:
Surface Mount
more info

Filters

Frequency

 
 
Apply

Package Type

Forward Voltage (V)

Apply

Reverse Voltage (V)

Apply

Forward Current (mA)

Apply

No. of Diodes