RF Transistors - United Monolithic Semiconductors

8 RF Transistors from United Monolithic Semiconductors meet your specification.
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Description: 20 W Power Transistor from DC to 18 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
42.04 dBm
Power(W):
16 W
Supply Voltage:
30 V
more info
Description: DC to 40 GHz Low Noise GaN on SiC pHEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 40 GHz
Power:
24.47 dBm
Power(W):
0.28 W
Gain:
8 to 14 dB
Supply Voltage:
3 V
more info
Description: 1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
41.76 dBm
Power(W):
15 W
Supply Voltage:
45 V
more info
Description: DC to 8 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 8 GHz
Power:
49.29 dBm
Power(W):
85 W
Supply Voltage:
30 V
more info
Description: DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description: DC to 13 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 13 GHz
Power:
47.4 dBm
Power(W):
55 W
Supply Voltage:
30 V
more info
Description: 1.2 to 1.4 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
52.55 dBm
Power(W):
180 W
Supply Voltage:
45 V
more info
Description: 30 Watt GaN Transistor from DC to 4.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 4.5 GHz
Power:
44.77 dBm
Power(W):
30 W
Gain:
16 dB
Supply Voltage:
50 V
more info

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