RF Transistors - MACOM

310 RF Transistors from MACOM meet your specification.

RF Transistors from MACOM are listed on everything RF. We have compiled a list of RF Transistors from the MACOM website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to MACOM and their distributors in your region.

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  • Manufacturers: MACOM
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Package Type:
Earless Flanged
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 to 18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
8.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:400 W GaN on SiC HEMT from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3400 to 3600 MHz
Power:
56.02 dBm
Package Type:
Earless Flanged
Power(W):
400 W
Gain:
13 dB
Supply Voltage:
48 V
more info
Description:170-W, 6.0-GHz, 50-V GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
52.3 dBm
Package Type:
Die
Power(W):
169.82 W
Supply Voltage:
50 V
more info
Description:25-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
28 V
more info
Description:45 W GaN HEMT from DC to 8 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8000 GHz
Power:
46.53 dBm
Package Type:
Die
Power(W):
44.98 W
Supply Voltage:
28 V
more info

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