RF Transistors

16 RF Transistors from MACOM meet your specification.
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  • Manufacturers: MACOM
  • Transistor Type: LDMOS
Description:450 W LDMOS FET from 960 to 1215 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
56.53 dBm
Power(W):
450 W (Peak)
Gain:
16.5 to 18 dB
Supply Voltage:
50 V
more info
Description:25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
18.5 to 19.5 dB
Supply Voltage:
0 to 55 V
Package:
PG-SON-16
more info
Description:320 Watt LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
55.05 dBm
Package Type:
Earless Flanged
Power(W):
319.89 W
Gain:
13.5 to 16 dB
Supply Voltage:
28 V
more info
Description:240 W LDMOS Transistor from 2515 to 2675 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2515 to 2675 MHz
Power:
49.54 to 53.8 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
90 to 240 W (P3dB)
Gain:
12.8 to 13.5 dB
Supply Voltage:
28 V
more info
Description:520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
925 to 960 MHz
Power:
57.16 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
520 W (P3dB)
Supply Voltage:
48 V
Package:
PG-HB2SOF-6-1
more info
Description:400 W Thermally Enhanced LDMOS FET from 2110 to 2180 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.18 GHz
Power:
52.04 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
160 to 400 W
Gain:
13.7 to 16 dB
Supply Voltage:
28 V
Package:
PG-HB2SOF-8-1
more info
Description:350 W High Power RF LDMOS Transistor from 470 to 860 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
470 to 860 MHz
Power:
55.44 dBm
Package Type:
2-Hole Flanged, Earless Flanged
Power(W):
350 W
Gain:
17.26 to 19.8 dB
Supply Voltage:
50 V
Package:
H-36248-4, H-37248-4
more info
Description:25 W LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
43.01 to 43.98 dBm
Package Type:
Surface Mount
Power(W):
20 to 25 W
Supply Voltage:
48 V
more info
Description:12 W LDMOS Transistor from 390 to 450 MHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
390 to 450 MHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
12 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.98 dBm
Package Type:
Earless Flanged
Power(W):
50 W
Gain:
14.2 to 14.6 dB
Supply Voltage:
28 V
more info

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