RF Transistors - WAVICE

33 RF Transistors from WAVICE meet your specification.
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  • Manufacturers: WAVICE
WG60028SF/P Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
50 V
more info
WG60002SF/P Image
Description:2 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
more info
WG011012150S Image
Description:150 W, GaN on SiC Power Transistor from 1.1 to 1.2 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.1 to 1.2 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
42 V
more info
WG60005SF/P Image
Description:5 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.98 dBm
Package Type:
Flanged
Power(W):
4.99 W
Supply Voltage:
50 V
more info
WG60028DD Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
27.99 W
Supply Voltage:
50 V
more info
WG60028SD Image
Description:28 W, GaN on SiC Power Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Surface Mount
Power(W):
27.99 W
Supply Voltage:
50 V
more info
WG40120SF/P Image
Description:120 W, GaN on SiC Power Transistor from DC to 4 GHz
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
28 V
more info
WG028031350I Image
Description:350 W, GaN on SiC Power Transistor from 2.8 to 3.1 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.8 to 3.1 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
50 V
more info
WGB03006025F Image
Description:25 W, GaN on SiC Power Transistor from 3 to 6 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3 to 6 GHz
Power:
43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Supply Voltage:
50 V
more info
WG21200SP Image
Description:200 W, GaN on SiC Power Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
more info

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