RF Transistors - WAVEPIA Co,. Ltd.

85 RF Transistors from WAVEPIA Co,. Ltd. meet your specification.
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  • Manufacturers: WAVEPIA Co,. Ltd.
Description:20 W GaN HEMT from 2 to 2.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
2 to 2.2 GHz
Power:
43.01 to 45 dBm (Psat)
Power(W):
20 to 31.62 W (Psat)
Gain:
13.7 to 17 dB
Supply Voltage:
28 V
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:15 W GaN HEMT Transistor Operates up to 10 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 10 GHz
Power:
41.76 dBm
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:280 W GaN HEMT from 1.03 to 1.09 GHz
Application Industry:
Cellular, Radar, Test & Measurement, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.53 dBm
Power(W):
283.79 W
Gain:
17.53 dB
Supply Voltage:
48 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
Description:107 W, GaN HEMT Transistor from 3.5 to 3.6 GHz
Application Industry:
Cellular, Wireless Infrastructure, Test & Measurem...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.5 to 3.6 GHz
Power:
50.3 dBm
Power(W):
107 W
Supply Voltage:
48 V
Package:
680B
more info
Description:112.2 W, GaN HEMT Transistor from 1.03 to 1.09 GHz
Application Industry:
Cellular, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.5 dBm
Power(W):
112.2 W
Supply Voltage:
48 V
Package:
680BU
more info
Description:260 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
54.15 dBm
Power(W):
260.02 W
Supply Voltage:
48 V
more info
Description:9 W, GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Cellular, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
39.5 dBm
Power(W):
9 W
Supply Voltage:
48 V
Package:
680B
more info

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