RF Transistors - WAVEPIA Co,. Ltd.

87 RF Transistors from WAVEPIA Co,. Ltd. meet your specification.

RF Transistors from WAVEPIA Co,. Ltd. are listed on everything RF. We have compiled a list of RF Transistors from the WAVEPIA Co,. Ltd. website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to WAVEPIA Co,. Ltd. and their distributors in your region.

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  • Manufacturers: WAVEPIA Co,. Ltd.
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:25 W Unmatched GaN Transistor from DC to 5 GHz
Application Industry:
Cellular, Radar, Test & Measurement, Wi-Fi / Bluet...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 5 GHz
Power:
43.98 to 45.4 dBm
Package Type:
Surface Mount, 2-Hole Flanged
Power(W):
25 to 34.67 W (Psat)
Supply Voltage:
28 V
more info
Description:100 W GaN HEMT Transistor from 5.3 to 5.8 GHz
Application Industry:
Broadcast, Military, Radar, SATCOM, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.3 to 5.8 GHz
Power:
50.3 dBm (Psat)
Package Type:
4-Hole Flanged
Power(W):
107.15 W (Psat)
Supply Voltage:
48 V
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
Description:10 W, GaN HEMT Transistor from 7.9 to 8.4 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.9 to 8.4 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
680B
more info
Description:15 to 18.6 W, GaN HEMT Transistor from 7.8 to 8.2 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
7.8 to 8.2 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:4 W, GaN HEMT Transistor from DC to 18 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 18 GHz
Power:
36 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 to 32 V
Package:
680B
more info
Description:18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz
Application Industry:
SATCOM, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
6.95 to 7.45 GHz
Power:
42.7 dBm
Package Type:
Flanged
Power(W):
18.62 W
Supply Voltage:
28 V
Package:
680B
more info
Description:19 W, GaN HEMT Transistor from 9.2 to 9.6 GHz
Application Industry:
SATCOM, Radar, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9.2 to 9.6 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
19.95 W
Supply Voltage:
28 V
Package:
680B
more info

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  • Manufacturers: WAVEPIA Co,. Ltd.

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