RF Transistors - Microsemi

170 RF Transistors from Microsemi meet your specification.
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  • Manufacturers : Microsemi
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:220 Watts, 50 Volts, 200 us, 10% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.42 to 53.89 dBm
Power(W):
244.91 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-78030
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:650 Watts - 50 Volts, 150 us, 10% Broad Band 1200 - 1400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 dBm
Power(W):
650.13 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-78030
more info
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