RF Transistors - Gallium Semiconductor

17 RF Transistors from Gallium Semiconductor meet your specification.

RF Transistors from Gallium Semiconductor are listed on everything RF. We have compiled a list of RF Transistors from the Gallium Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Gallium Semiconductor and their distributors in your region.

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  • Manufacturers: Gallium Semiconductor
Description:150 W GaN HEMT from 1 to 1.4 GHz
Application Industry:
SATCOM, Avionics, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
51.4 to 51.76 dBm
Package Type:
Surface Mount
Power(W):
141 to 150 W
Gain:
15.2 to 15.7 dB
Supply Voltage:
50 V
Package:
6-Pin DFN
more info
Description:150 W Linear/Pulsed GaN HEMT from DC to 3.2 GHz
Application Industry:
Communication, Radar, Test & Measurement, Wireless...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Surface Mount
Gain:
13.5 to 18.7 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Package Type:
Die
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:80 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Radar, Test & Measurement, Communication, Wireless...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Gain:
15.1 to 17.2 dB
Supply Voltage:
50 V
Package:
DFN
more info
GTH2e-2425300P Image
Description:300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
Application Industry:
ISM, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2400 to 2500 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Package Type:
Die
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info

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