RF Transistors

114 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, United Monolithic Semiconductors, WAVEPIA Co,. Ltd.
Description:20 W GaN HEMT from 2 to 2.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
2 to 2.2 GHz
Power:
43.01 to 45 dBm (Psat)
Power(W):
20 to 31.62 W (Psat)
Gain:
13.7 to 17 dB
Supply Voltage:
28 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:60 W GaN HEMT Operates up to 7 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 7 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:15 W GaN HEMT Transistor Operates up to 10 GHz
Application Industry:
Base Station, Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 10 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Cellular, Radar, Military, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:280 W GaN HEMT from 1.03 to 1.09 GHz
Application Industry:
Cellular, Radar, Test & Measurement, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.53 dBm
Package Type:
Flanged
Power(W):
283.79 W
Gain:
17.53 dB
Supply Voltage:
48 V
more info
Description:15 to 20 W, GaN HEMT Transistor form DC to 4 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
0.1 dBm
Power(W):
0.001 W
Supply Voltage:
50 V
more info

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