RF Transistors

33 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, United Monolithic Semiconductors, California Eastern Laboratories
Description:12GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:12 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Cellular, Radar, Military, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:20 GHz Super Low Noise FET in Hollow Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
Micro-X plastic
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:15 to 20 W, GaN HEMT Transistor form DC to 4 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
0.1 dBm
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:20 GHz Low Noise FET in Dual Mold Plastic PKG
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
20 GHz
Package Type:
Surface Mount
Supply Voltage:
1 to 3 V
Package:
4-pin thin Plastic
more info

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