RF Transistors

20 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Mini Circuits
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:18.2 to 20.7 dBm Ultra Low Noise RF Transistor from 45 MHz to 6 GHz
Transistor Type:
HEMT
CW/Pulse:
CW
Frequency:
45 MHz to 6 GHz
Power:
18.2 to 20.7 dBm
Power(W):
42.6 to 43.16 W
Gain:
9.3 to 24.1 dB
Supply Voltage:
3 to 4 V
Package:
SOT-343
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:18.1 to 20.5 dBm Ultra Low Noise RF Transistor from 45 MHz to 6 GHz
Transistor Type:
HEMT
CW/Pulse:
CW
Frequency:
45 MHz to 6 GHz
Power:
18.5 to 20.5 dBm
Power(W):
42.67 to 43.12 W
Gain:
8.3 to 22.3 dB
Supply Voltage:
3 to 4 V
Package:
SOT-343
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:19.6 to 21.3 dBm Ultra Low Noise RF Transistor from 10 MHz to 4 GHz
Transistor Type:
HEMT
CW/Pulse:
CW
Frequency:
10 MHz to 4 GHz
Power:
19.6 to 21.3 dBm
Power(W):
42.96 to 43.28 W
Gain:
12 to 24.6 dB
Supply Voltage:
4 V
Package:
SOT-343
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:17 to 20.1 dBm Ultra Low Noise RF Transistor from 45 MHz to 6 GHz
Transistor Type:
HEMT
CW/Pulse:
CW
Frequency:
45 MHz to 6 GHz
Power:
17 to 20.1 dBm
Power(W):
42.3 to 43.03 W
Gain:
8.4 to 21.3 dB
Supply Voltage:
3 to 4 V
Package:
SOT-343
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info

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