RF Transistors

272 RF Transistors from 3 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Gallium Semiconductor, ICONIC RF, NXP Semiconductors
Description:13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
Application Industry:
Cellular, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
41.4 dBm
Package Type:
Surface Mount
Power(W):
13.8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Base Station, Cellular
Transistor Type:
LDMOS
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
Description:Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
41 dBm
Power(W):
12.59 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Package Type:
Surface Mount
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:Discrete Power GaN HEMT 50 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Package Type:
Surface Mount
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type