RF Transistors

122 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, ICONIC RF, Qorvo
Description:13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.5 to 5 GHz
Gain:
16 dB
Supply Voltage:
48 V
Package:
DFN Package
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.4 to 3.6 GHz
Power:
42 dBm
Power(W):
16 W
Gain:
12.6 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:Discrete Power GaN HEMT 25 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:Discrete GaAs pHEMT Transistor Die from DC to 20 GHz
Application Industry:
Broadcast, Radar, SATCOM
Transistor Type:
pHEMT
Frequency:
DC to 20 GHz
Power:
22 dBm (Psat)
Package Type:
Surface Mount
Power(W):
0.15 W (Psat)
Gain:
14 dB
Supply Voltage:
8 V
Package:
Die
more info
Description:Discrete Power GaN HEMT 6 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38 dBm
Power(W):
6.31 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:6 W GaN Transistor from 2.5 to 5 GHz
Application Industry:
Base Station
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
Frequency:
2500 to 5000 MHz
Power:
37.78 dBm
Power(W):
6 W
Gain:
18.6 dB
Supply Voltage:
48 V
Package:
DFN
more info

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