RF Transistors

81 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, ICONIC RF, STMicroelectronics
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Power(W):
45 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Power(W):
45 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 25 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Power(W):
30 W
Supply Voltage:
28 V
more info
Description:Discrete Power GaN HEMT 6 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38 dBm
Power(W):
6.31 W
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Power(W):
30 W
Supply Voltage:
28 V
more info

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