RF Transistors

223 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Sainty-Tech Communications Limited
Description:40 dBm, Si Power Transistor from 220 to 260 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
220 to 260 MHz
Power:
40 dBm
Power(W):
10 W
Gain:
15.7 dB
Supply Voltage:
28 V
Package:
PG1021A
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:54 dBm, Si Power Transistor from 138 to 188 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
138 to 188 MHz
Power:
54 dBm
Power(W):
250 W
Gain:
16 dB
Supply Voltage:
32 V
Package:
PG1021A
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:52 dBm, Si Power Transistor from 220 to 260 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
220 to 260 MHz
Power:
52 dBm
Power(W):
150 W
Gain:
15.7 dB
Supply Voltage:
28 V
Package:
PG1021A
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:20 dBm, GaAs MOSFET Transistor operating at 12 GHz
Transistor Type:
MOSFET
Technology:
GaAs
Frequency:
12 GHz
Power:
20 dBm
Power(W):
0.1 W
Gain:
7 dB
Supply Voltage:
7 V
Package:
QF41A
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:40 dBm, GaAs Transistor operating at 1.24 to 1.3 GHz
Technology:
GaAs
Frequency:
1.24 to 1.3 GHz
Power:
40 dBm
Power(W):
10 W
Gain:
15 dB
Supply Voltage:
9 V
Package:
QF136H
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info

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