RF Transistors

262 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, NXP Semiconductors
Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Base Station, Cellular
Transistor Type:
LDMOS
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.87 to 55.26 dBm
Power(W):
307 to 336 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
Package:
4 Terminals Ceramic
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info

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