RF Transistors

22 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Infineon Technologies
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Transistor Type:
Bipolar
Technology:
SiGe
Power:
23.5 to 28 dBm
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info
Description:20 W GaN on SiC HEMT from DC to 7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 7 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
15.2 to 17.2 dB
Supply Voltage:
50 V
more info

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