RF Transistors

153 RF Transistors from 3 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Gallium Semiconductor, Infineon Technologies, Wolfspeed
Description:100 W GaN on SiC HEMT from 7.9 to 9.6 GHz
Application Industry:
Radar
Transistor Type:
FET, HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
7.9 to 9.6 GHz
Package Type:
4-Hole Flanged
Supply Voltage:
48 V
more info
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Transistor Type:
Bipolar
Technology:
SiGe
Power:
23.5 to 28 dBm
Package Type:
Surface Mount
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:10 W Surface-Mount GaN HEMT from DC to 8 GHz
Application Industry:
Cellular, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Supply Voltage:
28 V
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
Application Industry:
Cellular, Radar
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
18.5 to 19.5 dB
Supply Voltage:
0 to 55 V
Package:
PG-SON-16
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type