RF Transistors

287 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Microchip Technology, RFHIC
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:2200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
63.42 dBm
Package Type:
Pallet
Power(W):
2200 W
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3600 to 3800 MHz
Package Type:
Flanged
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:750 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
58.75 dBm
Package Type:
Ceramic
Power(W):
750 W
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Base Station
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:1200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:GaN Power Transistors from 1030 to 1090 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.41 dBm
Package Type:
Flanged
Power(W):
1100 W
Supply Voltage:
50 V
more info

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