RF Transistors

379 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Ampleon, RFHIC
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
Description:410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3600 to 3800 MHz
Package Type:
Flanged
Gain:
14.4 dB
Supply Voltage:
48 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Base Station
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info

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