RF Transistors

336 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Ampleon, Broadcom
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
Description:PHEMT Low Noise 31 dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
19 dBm
Package Type:
Surface Mount
Power(W):
0.08 W
Supply Voltage:
4 V
Package:
SMT 1.4x1.2
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
Description:0.5 to 26GHz Low Noise E-PHEMT in a Wafer Scale Package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
500 MHz to 26 GHz
Power:
8 dBm
Package Type:
Surface Mount
Power(W):
0.006 W
Supply Voltage:
2 V
Package:
SMT 1.05x0.55
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
400 MHz to 3.9 GHz
Power:
29 dBm
Package Type:
Chip
Power(W):
0.79 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info

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