RF Transistors

460 RF Transistors from 3 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Gallium Semiconductor, Polyfet RF Devices, Ampleon
Description:600 W GaN Doherty Power Transistor from 700 to 1000 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
700 to 1000 MHz
Package Type:
Surface Mount
Supply Voltage:
48 to 52 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
40 to 50 VDC
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 1 to 1300 MHz
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type