RF Transistors

161 RF Transistors from 3 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Gallium Semiconductor, Polyfet RF Devices, Tagore Technology
Description:6 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 to 32 V
Package:
16 Pin QFN
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
40 to 50 VDC
more info
Description:25 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular, Military
Transistor Type:
DHEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
44 dBm
Power(W):
25.11 W
Gain:
17.5 dB
Supply Voltage:
32 to 34 V
Package:
8 Pin QFN
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Cellular, Broadcast
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:RF Power LDMOS Transistor from 1 to 1300 MHz
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type