RF Transistors

53 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Amcom Communications
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.94 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:Ceramic Package GaAs Power pHEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37 dBm
Package Type:
Flanged
Power(W):
5.01 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
31 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
1.26 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-10GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
36 to 37 dBm (P5dB)
Package Type:
Flanged
Power(W):
3.98 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info

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