RF Transistors

23 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, United Monolithic Semiconductors
  • Supply Voltage : 48 to 51 V
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Communication, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:15 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
41.7 dBm
Power(W):
15 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
3 Lead hermetic Ceramic-Metal Flange Package
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Cellular, Radar, Military, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
0.1 dBm
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:15 to 20 W, GaN HEMT Transistor form DC to 4 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
0.1 dBm
Power(W):
0.001 W
Supply Voltage:
50 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:180 W GaN HEMT Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52 to 54 dBm (Psat)
Package Type:
Ceramic, 4-Hole Flanged
Power(W):
158.5 to 251.18 W (Psat)
Supply Voltage:
20 to 50 V
Package:
Hermatic Flange Ceramic
more info

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